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IBM11M4730H-70 参数 Datasheet PDF下载

IBM11M4730H-70图片预览
型号: IBM11M4730H-70
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory IC, 4MX72, CMOS, PDMA168]
分类和应用: 光电二极管
文件页数/大小: 26 页 / 284 K
品牌: IBM [ IBM ]
 浏览型号IBM11M4730H-70的Datasheet PDF文件第7页浏览型号IBM11M4730H-70的Datasheet PDF文件第8页浏览型号IBM11M4730H-70的Datasheet PDF文件第9页浏览型号IBM11M4730H-70的Datasheet PDF文件第10页浏览型号IBM11M4730H-70的Datasheet PDF文件第12页浏览型号IBM11M4730H-70的Datasheet PDF文件第13页浏览型号IBM11M4730H-70的Datasheet PDF文件第14页浏览型号IBM11M4730H-70的Datasheet PDF文件第15页  
IBM11M4730H  
IBM11M4730HB  
4M x 72 DRAM MODULE  
Refresh Cycle  
-60  
-70  
Symbol  
Parameter  
Unit  
Notes  
Min  
8
Max  
Min  
8
Max  
CAS Hold Time  
(CAS before RAS Refresh Cycle)  
tCHR  
tCSR  
tWRP  
tWRH  
ns  
ns  
ns  
ns  
CAS Setup Time  
(CAS before RAS Refresh Cycle)  
14  
15  
8
14  
15  
8
WE Setup Time  
(CAS before RAS Refresh Cycle)  
WE Hold Time  
(CAS before RAS Refresh Cycle)  
tRPC  
tREF  
RAS Precharge to CAS Hold Time  
Refresh Period  
3
3
ns  
32  
32  
ms  
1
1. 2048 refreshes are required every 64ms.  
Presence Detect Read Cycle  
-60  
-70  
Symbol  
Parameter  
Unit  
Notes  
Min  
0
Max  
Min  
Max  
tPD  
PDE to Valid Presence Detect Data  
10  
10  
0
10  
10  
ns  
ns  
1
2
tPDOFF  
PDE Inactive to Presence Detects Inactive  
1. Measured with the specified current load and 100pF.  
2. tPDOFF(max) defines the time at which the output achieves the open circuit condition and is not referenced to output voltage levels.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
54H8529  
SA14-4637-01  
Released 3/96  
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