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IBM11M32735BB-60W 参数 Datasheet PDF下载

IBM11M32735BB-60W图片预览
型号: IBM11M32735BB-60W
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 32MX72, 60ns, CMOS, DIMM-168]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 29 页 / 351 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 - last ship)  
IBM11M2735H  
IBM11M2735HB  
2M x 72 DRAM MODULE  
Write Cycle  
-60  
-70  
Symbol  
Parameter  
Write Command Set Up Time  
Unit  
Notes  
1
Min  
2
Max  
Min  
2
Max  
tWCS  
tWCH  
tWP  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Command Hold Time  
Write Command Pulse Width  
Write Command to RAS Lead Time  
Write Command to CAS Lead Time  
DIN Setup Time  
12  
10  
15  
12  
-2  
14  
12  
17  
14  
-2  
tRWL  
tCWL  
tDS  
2
2
tDH  
DIN Hold Time  
15  
17  
1. tWCS, tRWD, tCWD, and tAWD are not restrictive parameters. They are included in the data sheet as electrical characteristics only. If  
WCS tWCS(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the  
t
entire cycle; If tRWD tRWD(min.), tCWD tCWD(min.)and tAWD tAWD(min.), the cycle is a Read-Modify-Write cycle and the data will  
contain read from the selected cell: If neither of the above sets of conditions are met, the condition of the data (at access time) is  
indeterminate.  
2. Data-in set-up and hold is measured from the latter of the two timings, CAS or WE.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
50H4199  
SA14-4615-02  
Revised 5/96  
 
 
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