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IBM11M2645L-70J 参数 Datasheet PDF下载

IBM11M2645L-70J图片预览
型号: IBM11M2645L-70J
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 2MX64, 70ns, CMOS, DIMM-168]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 29 页 / 351 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 last ship)
IBM11M2645H
IBM11M2645HB
2M x 64 DRAM MODULE
DC Electrical Characteristics
Symbol
I
CC1
(T
A
= 0 to +70˚C, V
CC
= 3.3V
±
0.3V or 5.0V
±
0.5V)
Parameter
Min.
-60
-70
-60
-70
-60
-70
-60
-70
All but RAS
RAS
-10
-40
-10
Max.
720
mA
640
16
720
mA
640
400
mA
320
8
720
mA
640
+10
+40
+10
µA
µA
mA
1, 3
mA
Units
Notes
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min.)
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS = V
IH
)
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS = V
IH
: t
RC
= t
RC
min)
EDO Page Mode Current
Average Power Supply Current, EDO Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
HPC
= t
HPC
min)
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = V
CC
- 0.2V)
CAS Before RAS Refresh Current
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: t
RC
= t
RC
min)
Input Leakage Current
Input Leakage Current, any input
(0.0
V
IN
(V
CC
+ 0.3V)), All Other Pins Not Under Test = 0V
Output Leakage Current
(D
OUT
is disabled, 0.0
V
OUT
V
CC
)
Output Level (TTL)
Output “H” Level Voltage
( I
OUT
= -5mA)
Output Level (TTL)
Output “L” Level Voltage
( I
OUT
= +4.2mA)
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
2.4
V
CC
V
V
OL
0.0
0.4
V
1. I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on cycle rate.
2. I
CC1
and I
CC4
depend on output loading. Specified values are obtained with the output open.
3. Address can be changed once or less while RAS =V
IL
. In the case of I
CC4
, it can be changed once or less when CAS =V
IH
.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H4197
SA14-4614-02
Released 5/96
Page 6 of 29