IBM11D1360E
IBM11E1360E
IBM11D2360E
IBM11E2360E
1M/2M x 36 DRAM Module
Recommended DC Operating Conditions (TA = 0 to 70°C)
Symbol
VCC
Parameter
Min
4.5
Typ
5.0
Max
5.5
Units
V
Notes
1
Supply Voltage
1, 2
1, 2
VIH
VIL
V
CC + 0.5
0.8
Input High Voltage
Input Low Voltage
2.4
0.0
—
—
V
V
1. All voltages referenced to VSS
.
2. VIH may overshoot to VCC + 2.0V for pulse widths of ≤ 4.0ns (or VCC + 1.0V for ≤ 8.0ns). Additionally, VIL may undershoot to -2.0V
for pulse widths ≤ 4.0ns (or -1.0V for ≤ 8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-
ence.
Capacitance (TA = 0 to +70°C, VCC = 5.0V ± 0.5V)
1M x 36 2M x 36
Symbol
Parameter
Units
Max
55
47
43
30
70
12
Max
105
48
CI1
CI2
CI3
CI4
CI5
CI/O
Input Capacitance (A0-A9)
pF
pF
pF
pF
pF
pF
Input Capacitance (4MB: RAS0, 8MB: RAS0, 1)
Input Capacitance (4MB: RAS2, 8MB: RAS2, 3)
Input Capacitance (CAS)
45
54
Input Capacitance (WE)
137
25
Output Capacitance (All DQ, PQ)
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7977
SA14-4332-02
Revised 6/96
Page 5 of 20
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