IBM11D2360E IBM11D1360E
IBM11E2360E IBM11E1360E
1M/2M x 36 DRAM Module
Write Cycle
-60
-70
Symbol
Parameter
Units
Notes
Min
0
Max
—
Min
0
Max
—
tWCS
tWCH
tWP
Write Command Set Up Time
Write Command Hold Time
Write Command Pulse Width
ns
ns
ns
10
10
—
15
15
—
—
—
tRWL
tCWL
tWCR
Write Command to RAS Lead Time
—
—
—
—
—
—
—
—
—
—
—
—
ns
ns
ns
1
1
1
1
Write Command to CAS Lead Time
Write Command Hold Time Referenced to RAS
tDHR
tDS
Data Hold Time Referenced to RAS
DIN Setup Time
—
0
—
—
—
0
—
—
ns
ns
tDH
DIN Hold Time
12
—
15
—
ns
1. This timing parameter is not applicable to this product, but applies to a related product in this family.
Read Cycle
-60
-70
Symbol
tRAC
Parameter
Access Time from RAS
Units
ns
Notes
Min
—
Max
60
Min
—
Max
70
1, 2
1, 2
1, 2
tCAC
tAA
Access Time from CAS
—
—
0
15
30
—
—
—
—
—
—
—
—
—
0
18
35
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
Access Time from Address
tRCS
tRCH
tRRH
tRAL
tCAL
tCLZ
tOH
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Column Address to CAS Lead Time
CAS to Output in Low-Z
0
0
3
3
0
0
30
—
0
35
—
0
4
Output Data Hold Time
0
0
tCDD
tOFF
CAS to DIN Delay Time
15
—
—
20
—
—
ns
ns
4
5
Output Buffer Turn-off Delay
15
15
1. Measured with the specified current load and 100pF.
2. Access time is determined by the latter of tRAC, tCAC, tCPA, tAA
3. Either tRCH or tRRH must be satisfied for a read cycle.
.
4. This timing parameter is not applicable to this product, but applies to a related product in this family.
5. tOFF (max) defines the time at which the output achieves the open circuit condition and is not referenced to output voltage levels.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7977
SA14-4332-02
Revised 6/96
Page 8 of 20
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