IBM0625164GT3B IBM0625404GT3B
IBM06254B4GT3B IBM0625804GT3B
Advance
256Mb Double Data Rate Synchronous DRAM
Write Burst (Burst Length = 4)
Maximum DQSS
T1
T2
T3
T4
CK
CK
Write
NOP
NOP
NOP
Command
BA a, COL b
Address
t
(max)
DQSS
DQS
DQ
Dla-b
DM
t
(max)
t
(min)
QCSW
QCHW
QFC
(Optional)
Minimum DQSS
T4
T1
T2
T3
CK
CK
Write
NOP
NOP
NOP
Command
BA a, COL b
Address
t
(min)
DQSS
DQS
DQ
Dla-b
DM
t
(max)
QCSW
t
(max)
QCHW
QFC
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
A10 is Low with the Write command (Auto Precharge is disabled).
QFC is an open drain driver. Its output high level is achieved through an externally connected pull up resistor connected to V
.
DDQ
Don’t Care
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Use is further subject to the provisions at the end of this document.
29L0011.E36997
10/99
Page 31 of 75
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