IBM0612404GT3B
IBM0612804GT3B
Advance Rev 0.2
128Mb Double Data Rate Synchronous DRAM
Weak Strength Driver Pulldown and Pullup Characteristics
1. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve.
2. It is recommended that the “typical” IBIS pulldown V-I curve lie within the shaded region of the V-I curve.
Weak Strength Driver Pulldown Characteristics
Maximum
80
Typical High
Typical Low
Minimum
0
0
2.7
V
(V)
OUT
3. The full variation in driver pullup current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve.
4. It is recommended that the “typical” IBIS pullup V-I curve lie within the shaded region of the V-I curve.
Weak Strength Driver Pullup Characteristics
0
Minimum
Typical Low
Typical High
Maximum
-80
0
2.7
V
(V)
OUT
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the “typical” IBIS pullup to “typical” IBIS pulldown current should be unity
+ 10%, for device drain to source voltages from 0.1 to 1.0. This specification is a design objective only. It
is not guaranteed.
7. These characteristics are intended to obey the SSTL_2 class I standard.
8. This specification is intended for DDR SDRAM only.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
06K0566.F39350
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