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IBM0612804GT3B-8N 参数 Datasheet PDF下载

IBM0612804GT3B-8N图片预览
型号: IBM0612804GT3B-8N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1362 K
品牌: IBM [ IBM ]
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IBM0612404GT3B  
IBM0612804GT3B  
128Mb Double Data Rate Synchronous DRAM  
Advance Rev 0.2  
Simplified State Diagram  
Power  
Applied  
Power  
On  
Self  
Refresh  
Precharge  
Preall  
REFS  
REFSX  
REFA  
MRS  
EMRS  
Auto  
Refresh  
MRS  
Idle  
CKEL  
CKEH  
Active  
Power  
Down  
ACT  
Precharge  
Power  
Down  
CKEH  
CKEL  
Write  
Burst Stop  
Row  
Active  
Read  
Write A  
Read A  
Write  
Read  
Read  
Read A  
Write A  
Read  
A
PRE  
Write  
A
Read  
A
PRE  
PRE  
Precharge  
Preall  
PRE  
Automatic Sequence  
Command Sequence  
PREALL = Precharge All Banks  
MRS = Mode Register Set  
EMRS = Extended Mode Register Set  
REFS = Enter Self Refresh  
REFSX = Exit Self Refresh  
REFA = Auto Refresh  
CKEL = Enter Power Down  
CKEH = Exit Power Down  
ACT = Active  
Write A = Write with Autoprecharge  
Read A = Read with Autoprecharge  
PRE = Precharge  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350  
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