IBM0165165B
IBM0165165P
4M x 16 12/10 EDO DRAM
ADVANCED
Revision
Contents of Modification
12/19/95
Initial specification release.
1. WE for the Hidden Refresh Write cycle in the Truth Table was changed from “L” to “H”
2. Increased the -50 Icc1 from 165ma to 175ma
3. Increased the -50 Icc3 from 135ma to 145ma; Increased -60 Icc3 from 110ma to 120ma
4. Increased the Icc5 SP from .9ma to 1ma for -50 and -60
04/03/96
1. EC’d Specification to reflect Die Rev C; Previoue Die Rev’s will not meet this level of the specification
2. Package changed from 500mil 54 pin TSOP to 400mil 50 pin TSOP
3. Decreased Icc1 from 145ma to 115ma for -60 and from 175ma to 140 for -50
4. Decreased Icc3 from 120ma to 115ma for -60 and from 145ma to 140ma for -50
5. Decreased Icc4 from 120ma to 85ma for -60 and from 150ma to 105 for -50
6. Decreased Icc6 from 125ma to 115ma for -60 and from 150ma to 140ma for -50
10/11/96
5.Improved -50 timing parameters (t
,
t
, t
, t
, t
, t
, T
, t
, t
, t
, t
,
RAH CAH RCD CSH WCH RWC RWD CWD AWD WTS WTH
t
)
CPT
6. Increased t
for -50 from 51ns to 54ns
HPRWC
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Use is further subject to the provisions at the end of this document.
27H6253
SA14-4239-02
10/96
Page 30 of 31
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