IBM014405
IBM014405M
IBM014405B IBM014405P
1M x 4 10/10 EDO DRAM
Write Cycle
-60
-70
Symbol
Parameter
Units
Notes
Min.
0
Max.
—
Min.
0
Max.
—
tWCS
tWCH
tWP
Write Command Set Up Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
DIN Setup Time
ns
ns
ns
ns
ns
ns
ns
1,2
2
10
10
10
10
0
—
12
12
12
12
0
—
—
—
2
tRWL
tCWL
tDS
—
—
—
—
—
—
3
3
tDH
DIN Hold Time
10
—
12
—
1. tWCS, tRWD, tCWD and tAWD are not restrictive operating parameters. tRWD, tCWD, and tAWD apply to Read-Modify-Write cycles. If
WCS ≥ tWCS(min), the cycle is an Early Write cycle and the data I/O pins will remain open circuit (high impedance) throughout the
t
entire cycle. If tRWD ≥ tRWD(min), tCWD ≥ tCWD(min), and tAWD ≥ tAWD(min), the cycle is a Read-Modify-Write cycle and the data I/O
pins will contain read data from the selected cells. If neither of the above sets of conditions are satisfied, the condition of the data
I/O pins (at access time) is indeterminate.
2. Parameter tWP is applicable for a Delayed-Write cycle such as a Read-Write or Read-Modify-Write cycle. For Early-Write cycles,
both tWCS and tWCH must be met.
3. These parameters are referenced to the falling edge of CAS for Early-Write cycles and to the falling edge of WE for Delayed-Write
or Read-Modify-Write cycles.
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
27H6242
SA14-4232-03
Revised 6/96
Page 7 of 29
IBM [ IBM ]
