IBM014405
IBM014405M
IBM014405B IBM014405P
1M x 4 10/10 EDO DRAM
Read-Modify-Write Cycle
-60
-70
Symbol
Parameter
Units
Notes
Min.
135
79
Max.
—
Min.
162
90
Max.
—
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
ns
ns
ns
ns
ns
—
—
1
1
1
CAS to WE Delay Time
34
—
40
—
Column Address to WE Delay Time
OE Command Hold Time
49
—
55
—
10
—
12
—
1. tWCS, tRWD, tCWD and tAWD are not restrictive operating parameters. tRWD, tCWD, and tAWD apply to Read-Modify-Write cycles. If
WCS ≥ tWCS(min), the cycle is an Early Write cycle and the data I/O pins will remain open circuit (high impedance) throughout the
t
entire cycle. If tRWD ≥ tRWD(min), tCWD ≥ tCWD(min), and tAWD ≥ tAWD(min), the cycle is a Read-Modify-Write cycle and the data I/O
pins will contain read data from the selected cells. If neither of the above sets of conditions are satisfied, the condition of the data
I/O pins (at access time) is indeterminate.
Extended Data Out (Hyper Page) Mode Cycle
-60
Max.
-70
Max.
Symbol
Parameter
Units
Notes
Min.
10
25
60
5
Min.
12
30
72
5
tHCAS
tHPC
tHPRWC
tDOH
EDO (Hyper Page) Mode CAS Pulse Width
EDO (Hyper Page) Mode Cycle Time (Read/Write)
EDO (Hyper Page) Mode Read Modify Write Cycle Time
Data-out Hold Time from CAS
10k
—
10k
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—
—
—
—
tWHZ
Output buffer Turn-Off Delay from WE
WE Pulse Width to Output Disable at CAS High
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
0
10
0
15
tWPZ
10
35
—
60
10
10
—
10
40
—
70
10
10
—
tCPRH
tCPA
tRASP
tOEP
—
—
35
40
1
EDO (Hyper Page) Mode RAS Pulse Width
OE High Pulse Width
100K
—
100K
—
tOEHC
OE High Hold Time from CAS High
—
—
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
27H6242
SA14-4232-03
Revised 6/96
Page 9 of 29
IBM [ IBM ]
