IBM014405M IBM014405
IBM014405P IBM014405B
1M x 4 10/10 EDO DRAM
Read Cycle
-60
-70
Symbol
Parameter
Access Time from RAS
Units
Notes
Min.
—
—
—
—
0
Max.
60
15
30
15
—
Min.
—
—
—
—
0
Max.
70
18
35
18
—
tRAC
tCAC
tAA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2
2,3,5
2,5,6
2,7
Access Time from CAS
Access Time from Address
tOEA
tRCS
tRCH
tRRH
tRAL
tCLZ
tOFF
tOEZ
tCDD
tOES
tORD
Access Time From OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
CAS to Output in Low-Z
0
—
0
—
4
4
0
—
0
—
30
0
—
35
0
—
—
—
2
8,9
9
Output Buffer Turn-Off Delay
Output Buffer Turn-Off Delay From OE
CAS to DIN Delay Time
0
15
15
—
0
15
15
—
0
0
15
5
15
5
10
OE Setup Time prior to CAS
OE Setup Time prior to RAS (Hidden Refresh)
—
—
0
—
0
—
1. Assumes that tRCD ≤ tRCD(max) and tRAD ≤ tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in
this table, then tRAC will exceed the value shown.
2. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.
3. Assumes that tRCD ≥ tRCD(max) and tRAD ≤ tRAD(max).
4. Either tRCH or tRRH must be satisfied for a Read cycle.
5. Access time is determined by the longer of tAA or tCAC or tCPA
.
6. Assumes that tRCD ≤ tRCD(max) and tRAD ≥ tRAD(max).
7. If OE is tied permanently low, Late-Write or Read-Modify-Write operations are not possible.
8. tOFF is referenced from the rising edge of RAS or CAS, which ever is last.
9. tOFF(max) and tOEZ(max) define the time at which the output achieves the open circuit condition and are not referenced to output
voltage levels.
10. Either tCDD or tOED must be satisfied.
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
27H6242
SA14-4232-03
Revised 6/96
Page 8 of 29
IBM [ IBM ]
