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IBM0118165MJ3-70 参数 Datasheet PDF下载

IBM0118165MJ3-70图片预览
型号: IBM0118165MJ3-70
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, SOJ-42]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 350 K
品牌: IBM [ IBM ]
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IBM0118165 IBM0118165M  
IBM0118165B IBM0118165P  
1M x 16 10/10 EDO DRAM  
AC Characteristics (T = 0 to +70˚C, V = 3.3V ± 0.3V or V = 5.0V ± 0.5V)  
A
CC  
CC  
1. An initial pause of 200µs is required after power-up followed by 8 RAS only refresh cycles before proper device operation is  
achieved. In case of using the internal refresh counter, a minimum of 8 CAS before RAS refresh cycles instead of 8 RAS only  
refresh cycles is required.  
2. AC measurements assume tT=2ns.  
3. VIH(min.) and VIL(max.) are reference levels for measuring timing of input signals. Also, transition times are measured between VIH  
and VIL.  
4. Valid column addresses are A0 through A9.  
5. When both LCAS and UCAS go low at the same time, all 16 bits of data are read/written into the device. LCAS and UCAS cannot be  
staggered within the same Read/Write cycle.  
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)  
-50  
-60  
-6R  
-70  
Symbol  
Parameter  
Units  
Notes  
Min. Max. Min. Max. Min. Max. Min. Max.  
tRC  
tRP  
Random Read or Write Cycle Time  
RAS Precharge Time  
89  
35  
8
104  
40  
10  
60  
10  
0
104  
40  
10  
60  
10  
0
124  
50  
10  
70  
12  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCP  
CAS Precharge Time  
tRAS  
tCAS  
tASR  
tRAH  
tASC  
tCAH  
tRCD  
tRAD  
tRSH  
tCSH  
tCRP  
tOED  
tDZO  
tDZC  
tT  
RAS Pulse Width  
50  
8
10K  
10K  
10K  
10K  
10K  
10K  
10K  
10K  
CAS Pulse Width  
Row Address Setup Time  
Row Address Hold Time  
Column Address Setup Time  
Column Address Hold Time  
RAS to CAS Delay Time  
RAS to Column Address Delay Time  
RAS Hold Time  
0
10  
0
10  
0
10  
0
10  
0
8
_
10  
14  
12  
10  
50  
5
10  
14  
12  
10  
50  
5
10  
14  
12  
12  
55  
5
14  
12  
8
37  
25  
45  
30  
43  
30  
50  
35  
1
2
CAS Hold Time  
45  
5
CAS to RAS Precharge Time  
OE to DIN Delay Time  
13  
0
15  
0
15  
0
15  
0
3
4
4
5
OE Delay Time from DIN  
CAS Delay Time from DIN  
Transition Time (Rise and Fall)  
0
0
0
0
2
30  
2
30  
2
30  
2
30  
1. Operation within the tRCD(max.) limit ensures that tRAC(max.) can be met. tRCD(max.) is specified as a reference point only. If tRCD  
is greater than the specified tRCD(max.) limit, then access time is controlled by tCAC  
2. Operation within the tRAD(max.) limit ensures that tRAC(max.) can be met. tRAD(max.) is specified as a reference point only. If tRAD is  
.
greater than the specified tRAD(max.) limit, then access time is controlled by tAA  
.
3. Either tCDD or tOED must be satisfied.  
4. Either tDZC or tDZO must be satisfied.  
5. AC measurements assume tT=2ns.  
©IBM Corporation, 1995. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4721  
SA14-4223-01  
Revised 12/95  
Page 7 of 32  
 
 
 
 
 
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