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IBM0118160MT3-70 参数 Datasheet PDF下载

IBM0118160MT3-70图片预览
型号: IBM0118160MT3-70
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 27 页 / 280 K
品牌: IBM [ IBM ]
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IBM0118160  
IBM0118160M  
IBM0118160B IBM0118160P  
1M x 16 10/10 DRAM  
Revision Log  
Revision  
Contents Of Modification  
01/94  
Initial Release  
Change Fast Page Mode Currents (ICC4) from 85, 75, 65, 55mA to 100, 90, 80, 70mA  
06/17/94  
Combine the 3.3 Volt and the 5.0 Volt specifications  
Change the Refresh Period from 256ms to 128ms  
09/06/94  
Change ICC1, ICC3, ICC6 from 215, 195, 170, 150mA to 225, 205, 180, 160mA  
1. Iout changed to +2.0 mA and -2.0 mA in DC Electrical Characteristics table.  
2. Packaging diagrams modified to clarify lead thickness and standoff height.  
3. t  
4. t  
min changed from 0 to 5ns.  
min changed from 20 to 10ns.  
RPC  
CHR  
5. Currents in DC Electrical Characteristics table revised.  
6. Test Modes and Test Circuit Diagram removed.  
7. Rename t  
to t  
.
ODD  
OED  
11/15/95  
8. t  
9. t  
, t  
OED CDD OEZ  
, t  
, and t  
min changed from 20 to 15ns, for the 70ns part.  
OFF  
min changed from 5 to 0ns for all speed sorts.  
min changed from 20 to 15ns for the 70ns part.  
min changed from 5 to 10ns for all speed sorts.  
RRH  
OEH  
CSR  
10. t  
11. t  
12. tCAH min changed from 15 to 10ns on 60 and 70ns parts.  
13. t max changed from 20 to 15ns for 70ns parts.  
OFF  
1. The Low Power and Standard Power Specifications were combined. ES# 43G9387 and ES# 43G9388 were  
combined into ES# 43G9388.  
2. Added Die Rev E part numbers.  
3. tDH was reduced from 15ns to 12ns for the -60 speed sort.  
4. tCHD was added to the Self Refresh Cycle with a value of 350µs for all speed sorts.  
12/10/95  
5. The Self Refresh timing diagram was changed to allow CAS to go high tCHD (350µs) after RAS falls entering a  
Self Refresh.  
6. The CBR timing diagram was changed to allow CAS to remain low for back-to-back CBR cycles.  
7. WE for the Hidden Refresh Write cycle in the Truth Table was changed from “Lto ” H”.  
1. ICC2 was changed from 2mA to 1mA.  
2. II(L) and IO(L) were altered from +/- 10uA to +/- 5uA.  
3. tT was initially at a max of 30ns. It has been modified to 50ns for all speed sorts.  
4. tCPA was decreased from 30ns to 28ns for the -50 speed sort.  
5. tRASP max of 125K was raised to 200K for all speed sorts.  
6. tRP was changed from 35ns to 30ns for the -50 speed sort.  
09/01/96  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
43G9388  
SA14-4209-04  
Revised 11/96  
Page 26 of 26  
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