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IBM0117805BT3-6R 参数 Datasheet PDF下载

IBM0117805BT3-6R图片预览
型号: IBM0117805BT3-6R
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 X 0.725 INCH, TSOP2-28]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 30 页 / 334 K
品牌: IBM [ IBM ]
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IBM0117805 IBM0117805M  
IBM0117805B IBM0117805P  
2M x 8 11/10 EDO DRAM  
Self Refresh Cycle (Sleep Mode) - Low Power version only  
tRASS  
tRPS  
VIH  
RAS  
VIL  
tRPC  
tCHS  
tCSR  
tCRP  
tCP  
tCHD  
VIH  
VIL  
CAS  
WE  
tWRH  
tWRP  
VIH  
VIL  
tOFF  
VOH  
VOL  
DOUT  
Hi-Z  
: “H” or “L”  
NOTES:  
1. Address and OE are “H” or “L”  
2. Once RAS (min) is provided and RAS remains low, the DRAM  
will be in Self Refresh, commonly known as “Sleep Mode.”  
3. If tRASS > tCHD (min) then tCHD applies.  
If tRASS tCHD (min) then tCHS applies.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4724  
SA14-4221-04  
Revised 11/96  
Page 27 of 29  
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