Discontinued (9/98 - last order; 3/99 last ship)
IBM0116405
IBM0116405M
IBM0116405B IBM0116405P
4M x 4 12/10 EDO DRAM
Read-Modify-Write Cycle
-50
-60
Symbol
Parameter
Units
Notes
Min.
110
67
Max.
—
Min.
135
79
Max.
—
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
ns
ns
ns
ns
ns
—
—
1
1
1
CAS to WE Delay Time
30
—
34
—
Column Address to WE Delay Time
OE Command Hold Time
42
—
49
—
7
—
10
—
1. tWCS, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics
only. If tWCS ≥ tWCS (min), the cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle. If tRWD ≥ tRWD (min), tCWD ≥ tCWD (min) and tAWD ≥ tAWD (min), the cycle is a Read-Modify-Write cycle and the data out
will contain data read from the selected cell. If neither of the above sets of conditions are satisfied, the condition of the data out (at
access time) is indeterminate.
Extended Data Out (Hyper Page) Mode Cycle
-50
-60
Symbol
Parameter
Units
Notes
Min.
8
Max.
10K
—
Min.
10
25
60
5
Max.
10K
—
tHCAS
tHPC
tHPRWC
tDOH
EDO (Hyper Page) Mode CAS Pulse Width
EDO (Hyper Page) Mode Cycle Time (Read/Write)
EDO (Hyper Page) Mode Read Modify Write Cycle Time
Data-out Hold Time from CAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
51
5
—
—
—
—
tWHZ
Output buffer Turn-Off Delay from WE
WE Pulse Width to Output Disable at CAS High
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
0
10
0
10
tWPZ
7
—
10
35
—
60
5
—
tCPRH
tCPA
tRASP
tOEP
30
—
50
5
—
—
28
35
1
EDO (Hyper Page) Mode RAS Pulse Width
OE Precharge
200K
—
200K
—
tOEHC
OE High Hold Time from CAS High
5
—
5
—
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
28H4720
SA14-4226-06
Revised 4/97
Page 10 of 31
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