IBM0116405MT1-50 参数 Datasheet PDF下载

Discontinued (9/98 - last order; 3/99 last ship)

IBM01164054M x 412/10, 5.0V, EDOMMDD62DSU-001015231. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SRMMDD62DSU-001015231. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SRMMDD62DSU-001015231. IBM0116405B4M x 412/10, 3.3V, EDOMMDD62DSU-001015231.

IBM0116405 IBM0116405M

IBM0116405B IBM0116405P

4M x 4 12/10 EDO DRAM

Features

• 4,194,304 word by 4 bit organization

• Single 3.3V

±

0.3V or 5.0V

±

0.5V power supply

• Standard Power (SP) and Low Power (LP)

• 4096 Refresh Cycles

- 64 ms Refresh Rate (SP version)

- 256 ms Refresh Rate (LP version)

• High Performance:

-50

t

RAC

RAS Access Time

t

CAC

CAS Access Time

t

AA

t

RC

Column Address Access Time

Cycle Time

50

13

25

84

20

-60

60

15

30

104

25

Units

ns

ns

ns

ns

ns

• Low Power Dissipation

- Active (max) - 55 mA / 50 mA

- Standby: TTL Inputs (max) - 1.0 mA

- Standby: CMOS Inputs (max)

- 1.0 mA (SP version)

- 0.1 mA (LP version)

- Self Refresh (LP version only)

- 200µA (3.3 Volt)

- 300µA (5.0 Volt)

• Extended Data Out (Hyper Page) Mode

• Read-Modify-Write

• RAS Only and CAS before RAS Refresh

• Hidden Refresh

• Package: SOJ 26/24 (300milx675mil)

TSOP-26/24 (300milx675mil)

t

HPC

EDO (Hyper Page) Mode Cycle Time

Description

The IBM0116405 is a dynamic RAM organized

4,194,304 words by 4 bits, which has a very low

“sleep mode” power consumption option. These

devices are fabricated in IBM’s advanced 0.5µm

CMOS silicon gate process technology. The circuit

and process have been carefully designed to pro-

vide high performance, low power dissipation, and

high reliability. The devices operate with a single

3.3V

±

0.3V or 5.0V

±

0.5V power supply. The 22

addresses required to access any bit of data are

multiplexed (12 are strobed with RAS, 10 are

strobed with CAS).

Pin Assignments

(Top View)

Vcc

I/O0

I/O1

WE

RAS

A11

Pin Description

RAS

Row Address Strobe

Column Address Strobe

Read/Write Input

Address Inputs

Output Enable

Data Input/Output

Power (+3.3V or +5.0V)

Ground

CAS

WE

A0 - A11

OE

I/O0 - I/O3

V

CC

V

SS

1

2

3

4

5

6

26

25

24

23

22

21

Vss

I/O3

I/O2

CAS

OE

A9

A10

A0

A1

A2

A3

Vcc

8

9

10

11

12

13

19

18

17

16

15

14

A8

A7

A6

A5

A4

Vss

28H4720

SA14-4226-06

Revised 4/97

©IBM Corporation. All rights reserved.

Use is further subject to the provisions at the end of this document.

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