1HY5DU283222BF(P)
AC CHARACTERISTICS - I (AC operating conditions unless otherwise noted)
2
22
25
28
Unit Note
Parameter
Symbol
Min
23
Max
Min
22
Max
Min
19
Max
Min
17
Max
Row Cycle Time
tRC
tRFC
tRAS
-
-
-
-
-
-
-
-
CK
CK
CK
Auto Refresh Row Cycle Time
Row Active Time
25
24
21
19
15
100K
14
100K
12
100K
11
100K
Row Address to Column Address Delay for
Read
8
5
-
-
7
4
-
-
6
3
-
-
6
3
-
-
tRCDRD
tRCDWR
CK
CK
Row Address to Column Address Delay for
Write
5
1
8
5
3
-
-
-
-
-
4
1
7
4
2
-
-
-
-
-
4
1
6
3
2
-
-
-
-
-
4
1
6
3
2
-
-
-
-
-
Row Active to Row Active Delay
Column Address to Column Address Delay
Row Precharge Time
tRRD
tCCD
tRP
CK
CK
CK
CK
CK
Write Recovery Time
tWR
tDRL
Last Data-In to Read Command
Auto Precharge Write Recovery +
Precharge Time
13
-
11
-
9
-
9
-
tDAL
CK
2
-
10
-
2.2
-
10
-
2.5
-
10
-
-
-
CL=5
System Clock Cycle Time
CL=4
tCK
tCK
ns
ns
CK
CK
ns
ns
ns
2.8
0.45
0.45
-0.6
-0.6
-
10
0.45
0.45
-0.6
-0.6
-
0.55
0.55
0.6
0.6
0.35
0.45
0.45
-0.6
-0.6
-
0.55
0.55
0.6
0.6
0.35
0.45
0.45
-0.6
-0.6
-
0.55
0.55
0.6
0.6
0.35
0.55
0.55
0.6
Clock High Level Width
tCH
Clock Low Level Width
tCL
Data-Out edge to Clock edge Skew
DQS-Out edge to Clock edge Skew
DQS-Out edge to Data-Out edge Skew
tAC
0.6
tDQSCK
tDQSQ
0.35
tHPmin
-tQHS
tHPmin
-tQHS
tHPmin
-tQHS
tHPmin
-tQHS
-
-
-
-
-
-
-
-
1,6
1,5
Data-Out hold time from DQS
Clock Half Period
tQH
tHP
ns
ns
tCH/L
min
tCH/L
min
tCH/L
min
tCH/L
min
-
0.35
-
-
0.35
-
-
0.35
-
-
0.35
-
6
2
2
Data Hold Skew Factor
tQHS
tIS
ns
ns
ns
CK
CK
CK
ns
0.6
0.6
0.4
0.4
0.85
0.35
0.75
0.75
0.4
0.75
0.75
0.4
0.75
0.75
0.4
Input Setup Time
-
-
-
-
Input Hold Time
tIH
0.6
0.6
1.15
-
0.6
0.6
1.15
-
0.6
0.6
1.15
-
0.6
0.6
1.15
-
Write DQS High Level Width
Write DQS Low Level Width
Clock to First Rising edge of DQS-In
Data-In Setup Time to DQS-In (DQ & DM)
tDQSH
tDQSL
tDQSS
tDS
0.4
0.4
0.4
0.85
0.35
0.85
0.35
0.85
0.35
3
Rev. 1.2 / Jul. 2005
24
HYNIX [ HYNIX SEMICONDUCTOR ]
