Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY57V641620F(L/S)TP Series
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
TA
Rating
Unit
0 ~ 70
(Commercial part)
oC
Ambient Temperature
-40 ~ 85
(Industrial part)
oC
oC
V
Storage Temperature
TSTG
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
Voltage on Any Pin relative to VSS
Voltage on VDD supply relative to VSS
Short Circuit Output Current
Power Dissipation
VIN, VOUT
VDD, VDDQ
IOS
V
mA
W
PD
1
Soldering Temperature . Time
260 . 10
oC . Sec
TSOLDER
o
o
DC OPERATING CONDITION (TA= 0 to 70 C / -40 to 85 C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD, VDDQ
VIH
Min
3.0
Typ
3.3
3.0
-
Max
3.6
Unit
Note
1
V
V
V
2.0
VDDQ + 0.3
0.8
1, 2
1, 3
VIL
-0.3
Note: 1. All voltages are referenced to VSS = 0V
2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
o
o
AC OPERATING TEST CONDITION (TA= 0 to 70 C / -40 to 85 C, VDD=3.3±0.3V, VSS=0V)
Parameter
Symbol
VIH / VIL
Vtrip
Value
2.4 / 0.4
1.4
Unit
V
Note
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
V
tR / tF
Voutref
CL
1
ns
V
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
1.4
30
pF
1
Note: 1.
Vtt=1.4V
Vtt=1.4V
RT=500 Ω
RT=50 Ω
Z0 = 50Ω
Output
Output
30pF
30pF
DC Output Load Circuit
AC Output Load Circuit
Rev. 1.0 / Apr. 2007
7
HYNIX [ HYNIX SEMICONDUCTOR ]
