11
Synchronous DRAM Memory 256Mbit
HY57V561620F(L)T(P)-xI Series
DC CHARACTERISTICS II
(TA= -40 to 85
o
C)
Speed
6
100
1.0
1.0
H
90
Parameter
Operating Current
Precharge Standby
Current
in Power Down Mode
Precharge Standby
Current
in Non Power Down
Mode
Active Standby Cur-
rent
in Power Down Mode
Symbol
I
DD1
I
DD2P
I
DD2PS
Test Condition
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
CKE
≤
V
IL
(max), t
CK
= 15ns
CKE
≤
V
IL
(max), t
CK
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
2clks.
All other pins
≥
V
DD
-0.2V or
≤
0.2V
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
CKE
≤
V
IL
(max), t
CK
= 15ns
CKE
≤
V
IL
(max), t
CK
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
2clks.
All other pins
≥
V
DD
-0.2V or
≤
0.2V
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
t
RC
≥
t
RC
(min), All banks active
CKE
≤
0.2V
Normal
Low Power
Unit
mA
mA
mA
Note
1
I
DD2N
15
mA
8
3
3
mA
I
DD2NS
I
DD3P
I
DD3PS
Active Standby
Current in Non Power
Down Mode
I
DD3N
30
mA
20
100
180
2.0
1.0
90
170
mA
mA
mA
1
2
3
I
DD3NS
Burst Mode Operating
Current
Auto Refresh Current
Self Refresh Current
I
DD4
I
DD5
I
DD6
Note:
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. HY57V561620FT(P)-xI Series: Normal, HY57V561620FLT(P)-xI Series: Low Power
Rev 1.0 / Sep. 2006
10
HYNIX [ HYNIX SEMICONDUCTOR ]
