HY29F002T
START
START
Issue PROGRAM
Command Sequence:
Last cycle contains
Issue CHIP ERASE
Command Sequence
program Address/Data
Check Erase Status
(See Write Operation Status
Section)
Check Programming Status
(See Write Operation Status
Section)
DQ[5] Error Exit
DQ[5] Error Exit
Normal Exit
Normal Exit
GO TO
ERROR RECOVERY
CHIP ERASE COMPLETE
NO
Last Word/Byte
Done?
Figure 5. Chip Erase Procedure
YES
mine the status of the erase operation, as de-
scribed in the Write Operation Status section.
PROGRAMMING
COMPLETE
GO TO
ERROR RECOVERY
Figure 5 illustrates the Chip Erase procedure.
Figure 4. Programming Procedure
this state, and a succeeding read will show that
Sector Erase Command
the data is still “0”.
The Sector Erase command sequence consists
of two unlock cycles, followed by the erase com-
mand, two additional unlock cycles and then the
sector erase data cycle, which specifies which
sector is to be erased. As described later in this
section, multiple sectors can be specified for era-
sure with a single command sequence. During
sector erase, all specified sectors are erased se-
quentially. The data in sectors not specified for
erasure, as well as the data in any protected sec-
tors specified for erasure, is not affected by the
sector erase operation.
Figure 4 illustrates the procedure for the Program
operation.
Chip Erase Command
The Chip Erase command sequence consists of
two unlock cycles, followed by the erase command,
two additional unlock cycles and then the chip erase
data cycle. During chip erase, all sectors of the
device are erased except protected sectors. The
command sequence starts the Automatic Erase al-
gorithm, which preprograms and verifies the entire
memory, except for protected sectors, for an all zero
data pattern prior to electrical erase. The device
then provides the required number of internally
generated erase pulses and verifies cell erasure
within the proper cell margins. The host system is
not required to provide any controls or timings dur-
ing these operations.
The Sector Erase command sequence starts the
Automatic Erase algorithm, which preprograms
and verifies the specified unprotected sectors for
an all zero data pattern prior to electrical erase.
The device then provides the required number of
internally generated erase pulses and verifies cell
erasure within the proper cell margins. The host
system is not required to provide any controls or
timings during these operations.
Commands written to the device during execution
of the Automatic Erase algorithm are ignored. Note
that a hardware reset immediately terminates the
erase operation. To ensure data integrity, the
aborted chip erase command sequence should be
reissued once the reset operation is complete.
After the sector erase data cycle (the sixth bus
cycle) of the command sequence is issued, a sec-
tor erase time-out of 50 µs (minimum), measured
from the rising edge of the final WE# pulse in that
bus cycle, begins. During this time, an additional
sector erase data cycle, specifying the sector ad-
dress of another sector to be erased, may be writ-
ten into an internal sector erase buffer. This buffer
When the Automatic Erase algorithm is finished,
the device returns to the Read mode. Several
methods are provided to allow the host to deter-
Rev. 4.1/May 01
12
HYNIX [ HYNIX SEMICONDUCTOR ]
