GMS81C1102 / GMS81C1202
10. ELECTRICAL CHARACTERISTICS -GMS81C1102, GMS81C1202
10.1 Absolute Maximum Ratings - GMS81C1102, GMS81C1202
Supply voltage........................................... -0.3 to +6.5 V
Maximum current (ΣIOL)....................................150 mA
Storage Temperature ................................-40 to +125 °C
Maximum current (ΣIOH)....................................100 mA
Voltage on any pin with respect to Ground (VSS
)
Note: Stresses above those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional op-
eration of the device at any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods
may affect device reliability.
............................................................... -0.3 to VDD+0.3
Maximum current out of VSS pin........................200 mA
Maximum current into VDD pin ..........................150 mA
Maximum current sunk by (IOL per I/O Pin) ........25 mA
Maximum output current sourced by (IOH per I/O Pin)
...............................................................................15 mA
10.2 Recommended Operating Conditions - GMS81C1102, GMS81C1202
Specifications
Min.
Parameter
Symbol
Condition
Unit
Max.
6.0
6.0
8
fXIN=8MHz
4.5
2.2
1
VDD
Supply Voltage
V
f
XIN=4.2MHz
VDD=4.5~6.0V
DD=2.2~6.0V
fXIN
Operating Frequency
MHz
V
1
4.2
85
TOPR
Operating Temperature
-20
°C
10
Jan. 2002 ver 2.0
HYNIX [ HYNIX SEMICONDUCTOR ]
