GM76C256C Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
OE
tAA
tOE
tOH
tOLZ
CS
tACS
tCLZ
tOHZ
tCHZ
High-Z
Data
Out
Data Valid
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
tOH
Data
Out
Previous Data
Data Valid
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= VIL.
3. /OE =VIL.
Rev 03 / Apr. 2000
5
HYNIX [ HYNIX SEMICONDUCTOR ]
