GM76C256CW Series
AC CHARACTERISTICS(II)
Vcc = 5V
±10%,
T
A
= 0°C to 70°C (Normal) unless otherwise specified.
-55
# Symbol
Parameter
Min.
Max.
READ CYCLE
1
tRC
Read Cycle Time
55
-
2
tAA
Address Access Time
-
55
3
tACS
Chip Select Access Time
-
55
4
tOE
Output Enable to Output Valid
-
30
5
tCLZ
Chip Select to Output in Low Z
5
-
6
tOLZ
Output Enable to Output in Low Z
5
-
7
tCHZ
Chip Disable to Output in High Z
0
20
8
tOHZ
Out Disable to Output in High Z
0
20
9
tOH
Output Hold from Address Change
5
-
WRITE CYCLE
10 tWC
Write Cycle Time
55
-
11 tCW
Chip Selection to End of Write
50
-
12 tAW
Address Valid to End of Write
50
-
13 tAS
Address Set-up Time
0
-
14 tWP
Write Pulse Width
45
-
15 tWR
Write Recovery Time
0
-
16 tWHZ
Write to Output in High Z
0
20
17 tDW
Data to Write Time Overlap
25
-
18 tDH
Data Hold from Write Time
0
-
19 tOW
Output Active from End of Write
5
-
-70
Min.
Max.
70
-
-
-
10
5
0
0
10
70
65
60
0
50
0
0
30
0
5
-
70
70
35
-
-
25
25
-
-
-
-
-
-
-
25
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C (Normal) unless otherwise specified.
Parameter
Value
Input pulse level
5V
0.6V to 2.4V
3V
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
1.5V
Output Load
C
L
= 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
CAPACITANCE
T
A
= 25°C, f = 1.0MHz
Symbol
Parameter
C
IN
Input Capacitance
C
I/O
Input /Output Capacitance
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
6
8
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev 00 / Jul. 2000
4
HYNIX [ HYNIX SEMICONDUCTOR ]
