GM76C256CW Series
DC CHARACTERISTICS
Vcc = 3V
±10%,5V ±10%,
T
A
= 0¡
É
70¡
É
unless otherwise specified.
to
,
Vcc = 3V¡
¾
0%
1
Symbol
Parameter
Test Condition
Min Typ Max
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current Vss < V
OUT
< Vcc,
-1
-
1
/CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply /CS = V
IL
,
-
0.6
2
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating
/CS = V
IL,
I
I/O =
0mA,
-
-
30
Current
Min. Duty Cycle = 100%,
/CS = V
IL,
I
I/O =
0mA,
-
-
5
Cycle = 1us,
I
SB
TTL Standby Current
/CS= V
IH
-
-
0.3
(TTL Inputs)
I
SB1
CMOS Standby Current /CS > Vcc - 0.2V
L
20
(CMOS Inputs)
LL
10
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
OH
Output High Voltage
I
OH =
-1.0mA
2.2
Note : Typical values are at Vcc =3.0V/5.0V, T
A
= 25°C
Vcc = 5V¡
¾
0%
1
Min Typ Max
-1
-
1
-1
-
1
Unit
uA
uA
-
7
10
mA
-
-
-
-
-
-
2.4
-
-
-
-
-
-
-
70
10
1
40
20
0.4
-
mA
mA
mA
uA
uA
V
V
AC CHARACTERISTICS(I)
Vcc = 3V
±10%,
T
A
= 0°C to 70°C (Normal) unless otherwise specified.
-55
# Symbol
Parameter
Min.
Max.
READ CYCLE
1
tRC
Read Cycle Time
120
-
2
tAA
Address Access Time
-
120
3
tACS
Chip Select Access Time
-
120
4
tOE
Output Enable to Output Valid
-
55
5
tCLZ
Chip Select to Output in Low Z
10
-
6
tOLZ
Output Enable to Output in Low Z
10
-
7
tCHZ
Chip Disable to Output in High Z
0
40
8
tOHZ
Out Disable to Output in High Z
0
40
9
tOH
Output Hold from Address Change
10
-
WRITE CYCLE
10 tWC
Write Cycle Time
120
-
11 tCW
Chip Selection to End of Write
100
-
12 tAW
Address Valid to End of Write
100
-
13 tAS
Address Set-up Time
0
-
14 tWP
Write Pulse Width
65
-
15 tWR
Write Recovery Time
0
-
16 tWHZ
Write to Output in High Z
0
40
17 tDW
Data to Write Time Overlap
40
-
18 tDH
Data Hold from Write Time
0
-
19 tOW
Output Active from End of Write
10
-
-70
Min.
Max.
150
-
-
-
15
15
0
0
10
150
120
120
0
70
0
0
50
0
15
-
150
150
60
-
-
50
50
-
-
-
-
-
-
-
50
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev 00 / Jul. 2000
3
HYNIX [ HYNIX SEMICONDUCTOR ]
