GM71C17800C
GM71CS17800CL
Capacitance (VCC = 5V+/-10%, TA = 25C)
Symbol
CI1
Parameter
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
Min
Max
Unit
pF
Note
1
-
-
-
5
7
7
CI2
pF
1
CI/O
pF
1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = VIH to disable DOUT
.
AC Characteristics (VCC = 5V+/-10%, TA = 0 ~ +70C, Vss = 0V, Note 1, 2, 18)
Test Conditions
Input rise and fall times : 5 ns
Input timing reference levels : 0.8V, 2.4V
Output timing reference levels : 0.4V, 2.4V
Output load : 2TTL gate + CL (100 pF)
(Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
GM71C(S)17800 GM71C(S)17800 GM71C(S)17800
C/CL-5
C/CL-6
C/CL-7
Unit Note
Symbol
Parameter
Min Max Min Max Min Max
Random Read or Write Cycle Time
RAS Precharge Time
90
30
-
-
110
40
-
-
130
50
-
-
ns
ns
t
RC
tRP
CAS Precharge Time
7
-
10
60
-
10
70
-
ns
ns
t
CP
t
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
ODD
DZO
DZC
RAS Pulse Width
50 10,000
10,000
10,000
t
CAS Pulse Width
13 10,000 15 10,000 18 10,000 ns
t
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
0
7
0
-
-
-
0
10
0
-
-
-
-
0
10
0
-
-
-
-
ns
ns
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
7
17
12
13
50
5
-
45
30
-
10
15
20 45
15 30
20 52
15 35
3
4
t
t
t
15
60
5
-
-
18
70
5
-
-
CAS Hold Time
-
t
CAS to RAS Precharge Time
OE to DIN Delay Time
-
-
-
t
t
13
0
-
15
0
-
18
0
-
5
6
6
7
t
OE Delay Time from DIN
CAS Delay Time from DIN
Transition Time (Rise and Fall)
-
-
-
0
-
0
-
0
-
t
tT
3
50
3
50
3
50
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
