GM71C17800C
GM71CS17800CL
DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C)
Symbol
Parameter
Min Max Unit Note
V
OH
Output Level
Output "H" Level Voltage (IOUT = -5mA)
2.4
0
V
CC
V
V
Output Level
Output "L" Level Voltage (IOUT = 4.2mA)
V
OL
0.4
50ns
60ns
70ns
-
-
-
110
100
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling: tRC = tRC min)
I
CC1
mA
mA
mA
1, 2
90
I
I
CC2
CC3
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
-
2
50ns
60ns
70ns
50ns
60ns
-
-
-
110
100
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
2
90
100
90
I
CC4
-
-
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
mA
1, 3
(tPC = tPC min)
70ns
-
-
-
85
I
CC5
CC6
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, Dout = High-Z)
1
mA
uA
150
5
50ns
60ns
70ns
-
-
-
110
100
I
CAS-before-RAS Refresh Current
(tRC = tRC min)
mA
uA
90
Battery Back Up Operating Current
(Standby with CBR Refresh)
(tRC=62.5us, tRAS<=0.3us, DOUT=High-Z)
I
CC7
CC8
-
500
4,5
I
Standby Current RAS = VIH
CAS = VIL
-
-
5
mA
uA
1
5
D
OUT = Enable
Self-Refresh Mode Current
(RAS, CAS<=0.2V, DOUT=High-Z)
ICC9
300
I
L(I)
Input Leakage Current
Any Input (0V<=VIN<= 6V)
-10
-10
10
10
uA
uA
IL(O)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 6V)
Note: 1. ICC depends on output load condition when the device is selected.
CC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL
I
.
3. Address can be changed once or less while CAS = VIH
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L-version.
.
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
