Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
█
Electrical Characteristics
（Ta=25
℃
unless otherwise specified）
Symbol
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate – Body Leakage
2.0
4.3
1700
230
60
50
300
300
230
45
6.5
22
18
72
1.5
58
200
25
250
±
100
4.0
0.18
V
µA
µA
nA
V
I
D
=250µA ,V
GS
=0V
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V,Tj=125
℃
V
GS
=
±
20V , V
DS
=0V
V
DS
= V
GS
, I
D
=250µA
V
GS
=10V, I
D
=9A
V
DS
=40V, I
D
=9A
(Note 1)
Items
Min.
Typ.
Max.
Unit
Conditions
On Characteristics
Gate Threshold Voltage
V
GS(th)
R
DS(on)
g
FS
Ciss
Coss
Crss
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Rise Time
Turn - Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Ω
S
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
A
A
V
Dynamic Characteristics and Switching Characteristics
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
t
d(on)
tr
t
d(off)
t
f
Qg
Qgs
Qgd
V
DD
= 100 V, I
D
= 18Apk
R
G
= 25
Ω
(Note 1,2)
V
DS
=0.8V
DSS
, ID=18A,
V
GS
= 10 V
(Note 1,2)
Drain-Source Diode Characteristics and Maximun Ratings
Continuous Source–Drain Diode
I
S
Forward Current
Pulsed
Drain-Source
Diode
I
SM
Forward Current
Source–Drain Diode Forward
V
SD
On–Voltage
Notes:
1. Pulse Test: Pulse width≤300μS,Duty
cycle≤2%
2. Essentially independent of operating temperature
I
S
=18A,V
GS
=0
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
