Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
█
General Description
These power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers.
And DC-DC&DC-AC
Converters for
Telecom,Industrial and Consumer Environment
TO-220
█
Features
18A,200V,R
DS
(on)
<0.18Ω@V
GS
=10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF640
•
1- G 2-D 3-S
█
Maximum Ratings
（Ta=25
℃
unless otherwise specified）
T
stg
——Storage
Temperature ------------------------------------------------------
-55~150℃
T
j
——Operating
Junction Temperature -------------------------------------------------- 150℃
V
DSS
——
Drain-Source Voltage ---------------------------------------------------------- 200V
V
DGR
——
Drain-Gate Voltage (R
GS
=20kΩ) ------------------------------------------------------------ 200V
V
GSS
——
Gate-Source Voltage ------------------------------------------------------------------------
I
D
——
Drain Current (Continuous) -------------------------------------------------------------------
±
20V
18A
P
D
——
Maximum Power Dissipation ------------------------------------------------------------- 125W
I
AR
——
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A
E
AS
——
Single Pulse Avalanche Energy
(starting Tj = 25℃, I
D
= I
AR
, V
DD
= 50 V) --------------------------------------------------- 320mJ
E
AR
——
Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ
█
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.0
Max 62.5
Typ
0.5
Unit
℃/W
℃/W
℃/W
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
