Shantou Huashan Electronic Devices Co.,Ltd.
HCP6C60
█
Electrical Characteristics
（T
a
=25
℃
unless otherwise specified）
Symbol
I
DRM
V
TM
I
GT
V
GT
V
GD
I
H
Rth(j-c)
Rth(j-a)
dv/dt
Repetitive
Current
Items
Peak
Off-State
Min.
Typ.
Max.
10
200
1.6
15
1.5
0.2
20
V
Unit
uA
V
mA
V
AK
=V
DRM
T
c
=25
℃
T
c
=125
℃
I
TM
=9A,tp=380µs
V
AK
=6V(DC), R
L
=10 ohm
T
c
=25
℃
V
AK
=6V(DC), R
L
=10 ohm
T
c
=25
℃
V
AK
=12V, R
L
=100 ohm
T
c
=125
℃
mA
℃/W
℃/W
V/µs
Conditions
Peak On-State Voltage (1)
Gate Trigger Current（2）
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Thermal Resistance
Critical Rate of Rise Off-state
Voltage
200
V
I
T=100mA,
Gate open,
T
c
=25
℃
Junction to Case
Junction to Ambient
Linear slope up to V
D
=V
DRM
67%
Gate open
Tj=125
℃
3.12
89
1. Forward current applied for 1 ms maximum duration,duty cycle
≤1%.
2. R
GK
current is not included in measurement
█
Performance Curves
FIGURE 1 – Gate Characteristics
Max. Allowable Case Temperture (°c)
FIGURE 2 – Maximum CaseTemperture
Gate Voltage (v)
Gate
Current
(mA)
Average On-State Current (mA)
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
