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HCP6C60 参数 Datasheet PDF下载

HCP6C60图片预览
型号: HCP6C60
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器 [Silicon Controlled Rectifier]
分类和应用: 可控硅整流器
文件页数/大小: 3 页 / 174 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HCP6C60的Datasheet PDF文件第2页浏览型号HCP6C60的Datasheet PDF文件第3页  
Shantou Huashan Electronic Devices Co.,Ltd.
HCP6C60
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I
T(RMS)
=6A)
* Low On-State Voltage (1.4V(Typ.)@ I
TM
)
* Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection, motor control cicuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
(T
a
=25
unless otherwise specified)
T
s t g
——Storage
Temperature ------------------------------------------------------
-40~125℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-40~125℃
V
DRM
——Repetitive
Peak Off-State Voltage -------------------------------------------------------------------- 600V
I
T
RMS
)——R.M.S
On-State Current(180º Conduction Angles)------------------------------------------6A
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 106 °C) ----------------------------------------3.8A
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃) ---------------------------------------------------
66A
5W
I
FGM
——Forward
Peak Gate Current -------------------------------------------------------------------------------- 2A
V
RGM
——Reverse
Peak Gate Voltage ------------------------------------------------------------------------------- 5V