Shantou Huashan Electronic Devices Co.,Ltd.
HC106D
█
Electrical Characteristics
（T
C
=25
℃
unless otherwise specified）
Symbol
I
DRM
Items
Peak Repetitive Forward or
Reverse Blocking Current.
10
100
2.2
uA
V
Min.
Typ.
Max.
Unit
Conditions
V
AK
=Rated V
DRM
or
V
RRM
R
KG
=1000 ohms
T
j
=25
℃
T
j
=110
℃
I
FM
=1A
V
AK
=6V(DC), R
L
=100 ohms
T
j
=25
℃
T
j
=-40
℃
V
AK
=6V(DC), R
L
=100 ohms
T
j
=25
℃
T
j
=-40
℃
I
GR
=10 uA
V
AK
=12V, R
L
=100 ohms
T
j
=110
℃
or
I
RRM
V
TM
I
GT
Peak Forward On-State Voltage (1)
Gate Trigger Current（2）
15
35
200
500
0.8
1.0
6.0
uA
V
GT
Gate Trigger Voltage (2)
0.4
0.5
0.6
0.75
V
V
V
GRM
V
GD
I
H
Peak Reverse Gate Voltage
Gate Non-Trigger Voltage
Holding Current
0.19
0.33
0.07
0.2
V
Initiating current
=20mA,
3.0
6.0
2.0
5.0
3.0
75
260
mA
Gate open, V
D
=12V(DC)
T
j
=25
℃
T
j
=-40
℃
T
j
=110
℃
V
AK
=12V, I
G
=20mA
T
j
=25
℃
T
j
=-40
℃
Junction to Case
Junction to Ambient
I
L
Latching Current
0.2
0.35
mA
℃/W
℃/W
℃
Rth(j-c)
Rth(j-a)
TL
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature for
Soldering Purpose 1/8’’,from case
for 10 Seconds
Critical Rate-of-Rise Off-state
Voltage
dv/dt
8.0
V/µs
V
AK
= RatedV
DRM ,
Exponential
waveform ,
R
GK
=1000 ohms
Gate open
Tj=110
℃
(1) Pulse Test : Pulse Width
≤2.0ms,Duty
Cycle≤2%
(2) R
GK
is not included in measurement
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
