Shantou Huashan Electronic Devices Co.,Ltd.
HC106D
Sensitive Gate Silicon Controlled Rectifier
█
General Description
Glassivated PNPN devices designed for high volume consumer
applications such as temperature,light,and speed control;process
and remote control, and warning systems where reliability of
operation is important.
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Features
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat,Rugged,Thermopad Construction for Low Thermal Resistance
Sensitive Gate Triggering
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Maximum Ratings
（T
j
=25
℃
unless otherwise specified）
T
s t g
— —
St o r a g e Te mp e r a t u r e - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
-
4 0 ~ 15 0
℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-40~110℃
V
DRM
——
Peak Repetitive Off-State Voltage(Forward) ------------------------------------------------------ 400V
V
RRM
——
Peak Repetitive Off-State Voltage(Reverse) ------------------------------------------------------- 400V
（
——On-State
R.M.S Current 180º Conduction Angles, T
C
= 80 °C）
（
----------------------------------4A
I
T
RMS
）
I
T(AV)
——On-State
Average Current (180º Conduction Angles, T
C
= 80 °C) -------------------------------2.55A
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, T
j
= 110 °C) ---------
I
2
t
——Circuit
Fusing Considerations(t = 8.3ms) ----------------------------------------------------------
P
GM
——Forward
Peak Gate Power Dissipation (Pulse Width
≤1.0
µsec,T
c
=80℃) ----------------------
20A
1.65A
2
s
0.5W
P
G(AV)
——Forward
Average Gate Power Dissipation (Pulse Width
≤1.0
µsec, T
c
=80℃)------------------0.1W
I
GM
——Forward
Peak Gate Current (Pulse Width
≤1.0
µsec, T
c
=80℃)-------------------------------------- 0.2A
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
