MMBT3904
100
Static Characteristic
COMMON
EMITTER
Ta=25
℃
400
h
FE
——
I
C
COMMON EMITTER
VCE=1V
COLLECTOR CURRENT I
C
(mA)
80
500uA
450uA
400uA
350uA
Ta=100
℃
60
300uA
250uA
DC CURRENT GAIN h
FE
300
200
Ta=25
℃
40
200uA
150uA
100
20
100uA
I
B
=50uA
0
0
4
8
12
16
20
0
0.1
0.3
1
3
10
30
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
600
V
CEsat
——
I
C
1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
Ta=25
℃
0.8
Ta=100
℃
100
Ta=100
℃
Ta=25
℃
0.4
30
β=10
10
1
3
10
30
100
200
0.0
1
3
10
30
100
β=10
300
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
COMMON EMITTER
VCE=1V
——
V
BE
9
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
Ta=25
℃
COLLECTOR CURRENT I
C
(mA)
30
Cob
10
CAPACITANCE C (pF)
Ta=100
℃
3
3
Ta=25
℃
1
Cib
0.3
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
300
REVERSE VOLTAGE
V
(V)
f
T
VCE=20V
o
Ta=25 C
——
I
C
300
Pc
——
Ta
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR POWER DISSIPATION
Pc (mW)
1
10
250
200
200
150
100
50
100
3
30
60
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta
(
℃
)
2
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05