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MMBT3904 参数 Datasheet PDF下载

MMBT3904图片预览
型号: MMBT3904
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管( NPN ) [TRANSISTOR(NPN)]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 2 页 / 443 K
品牌: HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
 浏览型号MMBT3904的Datasheet PDF文件第2页  
MMBT3904
TRANSISTOR(NPN)
FEATURES
Complementary Type The
PNP
Transistor
MMBT3906
is Recommended
Epitaxial
Planar Die Construction
MARKING: 1AM
(3)C
SOT-23
1AM
(1)B
(2)E
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Parameter
Value
60
40
6
200
200
625
150
-55
~
+150
Unit
V
V
V
mA
mW
℃/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
Thermal Resistance
From
Junction toAmbient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
Test
conditions
Min
60
40
6
0.1
50
0.1
100
60
30
0.3
0.95
300
35
35
200
50
V
V
MHz
nS
nS
nS
nS
400
Max
Unit
V
V
V
μA
nA
μA
V
(BR)
CBO
I
C
= 10μA, I
E
=0
V
(BR)
CEO
I
C
= 1mA, I
B
=0
V
(BR)
EBO
I
E
=10μA, I
C
=0
I
CBO
I
CEX
I
EBO
h
FE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
V
CB
=60V, I
E
=0
V
CE
=30V,V
BE(off)
=3V
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
= 50mA
V
CE
=1V, I
C
= 100mA
I
C
=50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
=20V, I
C
=10mA,
f=
100MHz
V
CC
=3V,V
BE
=-0.5V
I
C
=10mA, I
B1
=-I
B2
=1.0mA
V
CC
=3V,I
C
=10mA,
I
B1
=-I
B2
=1mA
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
current
f
T
t
d
t
r
t
s
t
f
h
FE(1)
O
100-200
CLASSIFICATION OF
Rank
Range
Y
200-300
G
300-400
1 
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05