BC847S
Typical Characteristics
50
I
C
——
V
CE
COMMON EMITTER
o
Ta=25 C
1000
h
FE
o
——
I
C
COMMON EMITTER
V
CE
=5V
Ta=100 C
(mA)
40
100uA
80uA
30
I
C
COLLECTOR CURRENT
70uA
60uA
DC CURRENT GAIN
h
FE
90uA
300
Ta=25 C
o
100
20
50uA
40uA
30uA
30
10
20uA
I
B
=10uA
0
0
10
20
30
40
50
10
1
3
10
30
100
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
COMMON EMITTER
I
C
/I
B
=20
1000
900
800
700
o
V
BEsat
Ta=25 C
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
600
500
400
300
Ta=100 C
o
100
Ta=100 C
Ta=25 C
30
o
o
300
200
10
1
3
10
30
100
200
100
1
3
10
30
COMMON EMITTER
I
C
/I
B
=20
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
——
V
BE
V
CE
=5V
Ta=25 C
o
10
9
8
7
C
ob
——
V
CB
f=1MHz
I
E
=0
Ta=25 C
o
(mA)
(pF)
C
ob
OUTPUT CAPACITANCE
30
6
5
4
COLLCETOR CURRENT
I
C
10
3
3
1
2
0.3
0.1
0.0
1
0.2
0.4
0.6
0.8
1.0
1
3
10
30
100
BASE-EMMITER VOLTAGE
V
BE
(V)
COLLECTOR-BASE VOLTAGE
V
CB
(V)
1000
f
T
——
I
C
300
P
C
——
T
a
(MHz)
300
COLLECTOR POWER DISSIPATION
P
C
(mW)
250
f
T
200
TRANSITION FREQUENCY
100
150
100
30
COMMON EMITTER
V
CE
=5V
Ta=25 C
10
1
3
10
30
100
o
50
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
( C)
o
2
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
