BC847S
Multi-chip transistor (NPN)
SOT-363
APPLICATION
This device is designed for general purpose amplifier applications
Marking :1C
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation
Thermal Resistance. Junction to Ambient
Junction Temperature
Storage Temperature Range
Value
50
45
6
200
200
625
150
-55~+150
mA
mW
℃/W
℃
V
Units
E1
B1
C2
C1
B2
E2
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain*
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)(1)
Collector-emitter saturation voltage
V
CE(sat)(2)
V
BE(1)
Base-emitter voltage
V
BE(2)
Transition frequency
Collector output capacitance
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=20mA ,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
200
2
0.77
V
MHz
pF
I
C
=100mA,I
B
=5mA
V
CE
=5V,I
C
=2mA
0.58
0.65
0.7
V
V
Test
conditions
Min
50
45
6
15
nA
V
EB
=4V , I
C
=0
V
CE
=5V,I
C
=2mA
I
C
=10mA,I
B
=0.5mA
110
15
630
0.25
V
Typ
Max
Unit
V
V
V
I
C
=10µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=30V,I
E
=0
f
T
C
ob
*pulse test: Pulse Width
≤300μs,
Duty Cycle≤ 2.0%.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
