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LM5171 参数 Datasheet PDF下载

LM5171图片预览
型号: LM5171
PDF下载: 下载PDF文件 查看货源
内容描述: 1.5A ,用280kHz ,升压稳压器 [1.5A, 280kHz, Boost Regulator]
分类和应用: 稳压器
文件页数/大小: 19 页 / 582 K
品牌: HTC [ HTC KOREA TAEJIN TECHNOLOGY CO. ]
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1.5A, 280kHz, Boost Regulator  
LM5171  
junction temperature exceeds 180°C±30°. However, repeated operation at such high temperatures will ensure a  
reduced operating life.  
Calculation of the junction temperature is an imprecise but simple task. First, the power losses must be  
quantified. There are three major sources of power loss on the LM5171:  
• biasing of internal control circuitry, PBIAS  
• switch driver, PDRIVER  
• switch saturation, PSAT  
The internal control circuitry, including the oscillator and linear regulator, requires a small amount of power  
even when the switch is turned off. The specifications section of this datasheet reveals that the typical operating  
current, IQ, due to this circuitry is 5.5mA. Additional guidance can be found in the graph of operating current vs.  
temperature. This graph shows that IQ is strongly dependent on input voltage, VIN, and temperature. Then  
PBIAS = VIN IQ  
Since the onboard switch is an NPN transistor, the base drive current must be factored in as well. This  
current is drawn from the VIN pin, in addition to the control circuitry current. The base drive current is listed in the  
specifications as ΔICC/ΔISW, or switch transconductance. As before, the designer will find additional guidance in  
the graphs. With that information, the designer can calculate  
ICC  
PDRIVER = VIN ISW  
×
× D  
ΔISW  
where:  
ISW = the current through the switch;  
D = the duty cycle or percentage of switch ontime.  
ISW and D are dependent on the type of converter. In a boost converter,  
1
ISW(AVG) ILOAD × D×  
Efficiency  
VOUT -VIN  
VOUT  
D  
In a flyback converter,  
VOUT IILOAD  
1
ISW(AVG)  
×
VIN  
Efficiency  
VOUT  
NS  
D  
VOUT  
+
VIN  
NP  
The switch saturation voltage, V(CE)SAT, is the last major source of onchip power loss. V(CE)SAT is the  
collectoremitter voltage of the internal NPN transistor when it is driven into saturation by its base drive current.  
The value for V(CE)SAT can be obtained from the specifications or from the graphs, as “Switch Saturation Voltage.”  
Thus,  
PSAT = V(CE)SAT ISW * D  
Dec. 2010 - Rev. 1.2.1  
- 18 -  
HTC  
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