HI-SINCERITY
MICROELECTRONICS CORP.
HSPICE 2G.6 Model
•
NPN BJT Parameters
IS=1.444E-16 (A)
BF=85.9
NF=1.0
VAF=45.9 (V)
IKF=160.3E-3 (A)
ISE=2.0E-18 (A)
NE=2.0
BR=18.54
NR=1.01
VAR=6.299
IKR=10.0E-3
ISC=1.21E-16
NC=1.01
RB=4.30 (Ohm)
IRB=20.0E-3 (A)
RBM=2.78 (Ohm)
RE=1.011 (Ohm)
RC=16.69 (Ohm)
CJE=6.04E-13 (F)
VJE=1.003 (V)
MJE=0.3882
TF=1.22E-11 (Sec)
XTF=1.70
VTF=0.69 (V)
ITF=0.1 (A)
PTF=10.0 (deg)
CJC=2.38E-13 (F)
VJC=0.7 (V)
MJC=0.4474
XCJC=0.3
XTI=3.0
FC=0.9
BV=0.0 (V)
IBV=1.0E-3 (A)
XTI=3.0
FC=0.5
BV=0.0 (V)
IBV=1.0E-3(A)
C2=150 (fF)
C3=80 (fF)
Le=0.6 (nH)
Lb=0.85 (nH)
Lc=0 (nH)
Spec. No. : HN200103
Issued Date : 1999.08.01
Revised Date : 2002.10.25
Page No. : 4/7
TR=1.0E-9 (Sec)
CJS=2.43E-13 (F)
VJS=0.5734 (V)
MJS=0.3798
XTB=0.0
EG=1.11 (eV)
XTI=3.0
FC=0.9
TNOM=25 (°C)
•
B’-E’ DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
RS=10.0 (Ohm)
VJ=1.003 (V)
N=1.0
M=0.3882
TT=0.0 (Sec)
EG=1.11 (eV)
•
C’-S’ DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
RS=0.0 (Ohm)
VJ=0.5734 (V)
N=1.0
M=0.3798
TT=0.0 (Sec)
EG=1.11 (eV)
•
Other Parasitic Parameters
R
SS
=10.0 (Ohm)
R
EX
=0.0 (Ohm)
R
BX
=0.0 (Ohm)
R
SC
=250.0 (Ohm)
R
CX
=0.0 (Ohm)
C
SP
=20.89 (fF)
R
SX
=5.0 (Ohm)
C
SC
=41.79 (fF)
R
SP
=450.0 (Ohm)
C1=70 (fF)
Transistor Chip Equivalent Circuit
C’
B’
B
R
BX
E
R
EX
0.1nH
R
SS
R
SX
R
sp
C
SP
C
KF=0.0
AF=1.0
TNOM=25 (°C)
KF=0.0
AF=1.0
TNOM=27 (°C)
L1=0.5 (nH)
L2=0.5 (nH)
L3=0.6 (nH)
Package Equivalent Circuit
C
3
L
C
L
1
S’
Base
C
SC
C
1
L
b
C
Transistor S
Chip
B
E
L
e
L
2
Collector
C2
G-P
R
SC
L
3
Emitter
HSC5094
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
