HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200103
Issued Date : 1999.08.01
Revised Date : 2002.10.25
Page No. : 1/7
HSC5094
NPN SILICON BIPOLAR TRANSISTOR
Description
The HSC5094 is a NPN Silicon Transistor designed for low noise
amplifier at VHF, UHF and CATV band.
Features
SOT-23
•
Low Noise and High Gain: NF=1.4dB, Ga=12dB @ V
CE
=2V, Ic=4.2mA, f=0.9GHz
•
High Power Gain: MAG=13.5dB @ V
CE
=5V, Ic =4.5mA, f=0.9GHz
Applications
•
Low noise and high gain amplifiers
•
Oscillator buffer amplifiers
Electrical Characteristics
•
Maximum Ratings (Ta=25°C)
Parameters
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
•
Characterization Information (Ta=25°C)
Parameters
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Cutoff Frequency
Minimum Noise Figure
Associated Gain
Insertion Gain |S
21
|
2
in 50 Ohm system
Conditions
V
CB
=3V
V
EB
=1V
V
CE
=2V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=3V, I
C
=12mA
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
Symbol Min
I
CBO
-
I
EBO
-
h
FE
50
-
f
T
-
-
NF
min
-
-
G
A
-
-
|S
21
|
2
-
Typ. Max Unit
-
1
uA
-
1
uA
80 200
7.6
-
GHz
9
-
GHz
1.4
-
dB
1.6
-
dB
12
-
dB
13.5
-
dB
12.8
-
dB
13.5
-
dB
Symbol
V
CEO
V
CBO
V
EBO
@ I
E
=100uA
I
C
P
C
T
j
T
stg
Min.
-
-
-
-
-
-
-50
Typ.
10
18
2.5
*20
150
125
-
Max.
-
-
-
-
-
-
125
Unit
V
V
V
mA
mW
°C
°C
* Note: Here we define the point where the DC current gain drops off.
HSC5094
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
