HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200101
Issued Date : 2001.07.30
Revised Date : 2004.12.21
Page No. : 1/5
HM117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM117 is designed for use in general purpose amplifier and low-speed
switching applications.
SOT-89
Darlington Schematic
C
Absolute Maximum Ratings
(T
A
=25°C)
•
Maximum Temperatures
Storage Temperature ................................................................... -55 ~ +150
°C
Junction Temperature .......................................................... +150
°C
Maximum
B
R1
R2
E
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ................................................................................................................... 1.2 W
Total Power Dissipation
(Printed circuit board 2mm thick, collector plating 1cm
2
square or larger) ....................................................... 1.6 W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage...................................................................................................................... -100 V
BV
CEO
Collector to Emitter Voltage................................................................................................................... -100 V
BV
EBO
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current (Continue) ............................................................................................................................ -4 A
I
C
Collector Current (Peak) .................................................................................................................................. -6 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
Cob
Min.
-100
-100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-1
-2
-2
-2.5
-2.8
-
-
200
pF
Unit
V
V
mA
mA
mA
V
V
K
I
C
=-1mA
I
C
=-30mA
V
CB
=-100V
V
CE
=-50V
V
EB
=-5V
I
C
=-2A, I
B
=-8mA
I
C
=-2A, V
CE
=-4V
I
C
=-1A, V
CE
=-4V
I
C
=-2A, V
CE
=-4V
V
CB
=-10V, f=0.1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HM117
HSMC Product Specification