HI-SINCERITY
MICROELECTRONICS CORP.
•
Switching Characteristics
Symbol
Parameter
Turn-On Delay Time
T(on)
Turn-On Rise Time
Turn-Off Delay Time
T(off)
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Condition
V
DS
=15V, I
D
=25A
V
GS
=10V, R
GEN
=24Ω
V
DS
=10V, I
D
=25A,
V
GS
=10V
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 2/5
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max Unit
30
ns
110 ns
150 ns
130 ns
45
nC
10
nC
10
nC
•
Drain-Source Diode Characteristics And Maximum Ratings
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=25A
-
-
-
-
25
1.3
A
V
Characteristics Curve
On-Region Characteristic
100
VGS=10V 8V
80
3.0
7V 6V
VGS= 4V
On-Resistance Variation With Gate Voltage &
Drain Current
Normalized Drain-Source On-
Resistance
Drain-Source Current (A)
2.5
4.5V
5V
5V
60
4.5V
40
2.0
6V
1.5
7V
8V
1.0
10V
4V
20
3V
0
0
1
2
3
4
5
0.5
0
20
40
60
80
Drain-Source Voltage (V)
Drain Current (A)
On Resistance Variation & Temperature
1.6
On-Resistance Variation & Drain Current &
Temperature
2.5
Normalized Drain-Source On-Resistance
1.5
1.3
1.2
1.1
1.0
0.9
0.8
25
50
ID=25A
VGS=10V
Normalized Drain-Source On-
Resistance
1.4
VGS=10V
2
TJ=125°C
1.5
TJ=25°C
1
0.5
75
100
125
150
0
20
40
60
80
Junction Temperature (°C)
Drain Current (A)
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
