HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
Reference to 25℃, ID=1mA
V
GS
=10V, I
D
=5.0A
V
GS
=4.5V, I
D
=2.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=10V, I
D
=5.0A
1
60
Characteristic
Test Conditions
Min.
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 2/5
Typ.
Max.
Unit
V
0.06
41
55
3
1
±100
7.0
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
FS
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current (Tj=25°C)
Gate-Body Leakage Current
Forward Transconductance
V/℃
mΩ
V
uA
nA
S
•
Drain-Source Diode Characteristics
V
SD
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.6A
1.2
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
H4946DS & H4946DP
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
