HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 1/5
H4946 Series
N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)
8
•
1
2
3
8-Lead Plastic
DIP-8
Package Code: P
Features
•
R
DS(on)
<41mΩ@V
GS
=10V, I
D
=5.0A
•
R
DS(on)
<55mΩ@V
GS
=4.5V, I
D
=2.5A
•
Low On-resistance
•
Fast Switching Speed
•
SOP-8 Package
7
6
5
8-Lead Plastic
SO-8
Package Code: S
4
H4946DS Symbol & Pin Assignment
5
6
7
8
Q2
Q1
4
3
2
1
Pin 1: Source 2
Pin 2: Gate 2
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6: Drain 1
Pin 7 / 8: Drain 2
Description
The Advanced Power MOSFETS provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
ID@TA=25℃
ID@TA=70℃
I
DM
P
D
T
stg
T
j
,
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current)
Continuous Drain Current
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Ratings
60
±20
6.0
3.5
20
2.0
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
°C
°C
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in
2
2oz Cu PCB board
H4946DS & H4946DP
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
