ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
c
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
R
V
GS
= 0V , I
D
= -250uA
-
30
R
V
-1
-100
uA
nA
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
DS
= -24V , V
GS
= 0V
R
R
V
GS
= -12V , V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
b
V
GS(th)
V
DS
= V
GS
, I
D
= -250uA
V
GS
= -10V , I
D
= -4.2A
-0.5
-1.3
64
75
120
V
m-ohm
m-ohm
m-ohm
Drain-Source On-State Resistance
R
DS(on)
V
GS
= -4.5V , I
D
= -3.0A
R
R
V
GS
= -2.5V , I
D
= -1.2A
R
R
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
c
b
V
GS
= 0V , I
S
= -1.0A
-1.2
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
V
DS
= 15V , V
GS
= 0V
C
OSS
f = 1.0MHz
C
RSS
c
1325
172
140
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Note
b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% .
c. Guaranteed by design , not subject to production testing .
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -15V , I
D
= -1A
V
GEN
= -4.5V
R
L
= 15 ohm
R
GEN
= 10 ohm
V
DS
= -15V
I
D
= -1A
V
GS
= -10V
5
3
30
10
27.8
3.2
2.72
ns
ns
ns
ns
nC
nC
Q
g
Q
gs
Q
gd
nC
Tel:+86-755-82973805
：
：
Fax:+86-755-82973550
3
E-mail: sales@hoperf.com
http://www.hoperf.com
3
HOPERF [ Hope Microelectronics co., Ltd ]
