P-Channel High Density Trench MOSFET
PRODUCT SUMMARY
V
DSS
I
D
MAR6401
FEATURES
●Super high dense cell trench design for low R
DS(on)
.
●Rugged and reliable.
●SOT-23-3L package.
R
DS(on)
(m-ohm) Max
64
@ V
GS
= -10V
R
-30V
R
-4.2A
R
75
@ V
GS
= -4.5V
R
120 @ V
GS
= -2.5V
D
SOT-23-3L
D
S
G
MARKING:A19T
G
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
A
= 25 °C
-Pulse
b
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
a
a
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
,T
STG
Limit
-30
± 12
-4.2
-16
-2.2
1.25
- 55 to 150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance,Junction-to-Ambient
a
Note
a. Surface Mounted on FR4 Board , t ≤ 5sec .
b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% .
Symbol
R
thJA
Typ
c
75
Max
100
Unit
°C/W
Tel:+86-755-82973805
：
：
Fax:+86-755-82973550
2
E-mail: sales@hoperf.com
http://www.hoperf.com
2
HOPERF [ Hope Microelectronics co., Ltd ]
