contaminants in the optical path. Potential
applications include presence and motion
sensing, position encoding, limit sensing,
movement detection, and counting.
Benefits: Phototransistor with internal
base-emitter shunt resistance. Transfer
molding of this device provides enhanced
optical centerline performance. Lead
lengths are staggered to provide a
Benefits: An IR transmissive polysulfone
housing features smooth optical faces
without external aperture openings
(desirable when aperture blockage from
airborne contaminants is a possibility).
HOA2498.
simple method of polarity identification.
Provides high contrast ratio in reflective
applications where unwanted background
reflection is a possibility. Potential
applications include those which require
ambient light rejection, or in transmissive
Features: Choice of phototransistor or
photodarlington output • Focused for
maximum response • Wide operating
temperature -55 °C to 100 °C [-67
°F to 212 °F] • Metal-can packaged
components
HOA1879.
Features: Phototransistor output
• Often accurate position sensing
• Choice of detector aperture • 3,18 mm
[0.125 in] slot width • Dust protective
applications where the interrupter media is housing • Plastic-molded components
semi-transparent to infrared energy.
Benefits: Infrared emitter facing a
phototransistor. Switching takes place
Benefits: An infrared emitter and
phototransistor or photodarlington
encased side-by-side on optical axes.
Detector responds to radiation from
infrared emitter only when a reflective
object passes within its field of view.
Potential applications include presence
sensing, motion sensing, position
encoding, limit sensing, movement
detection, and counting.
TRANSMISSIVE SENSORS
whenever an opaque object passes
HOA1877.
through the slot between emitter and
Features: Choice of phototransistor or
detector. Employs an IR transmissive
photodarlington output • Wide operating
housing which features smooth optical
temperature -55 °C to 100 °C [-67 °F to
faces without external aperture openings
212 °F] • 12,7 mm [0.5 in] high optical axis
(desirable when aperture blockage from
position • 9,52 mm [0.375 in] slot width
airborne contaminants is a possibility).
• Metal can packaged components
Often ideal where maximum position
Benefits: An infrared emitter facing
a phototransistor or photodarlington.
Detector switching takes place whenever
an opaque object passes through the slot
between emitter and detector.
resolution is desired.
LOW LIGHT REJECTION
PHOTOTRANSISTORS
SDP8475-201.
Features: T-1 plastic package • Low light
level immunity • 20° (nominal) acceptance
angle • Mechanically and spectrally
matched to SEP8505 and SEP8705
infrared emitters
HOA1882.
Features: Choice of phototransistor
or photodarlington output • Compact
package size • Dust protective housing
• 5,08 mm [0.200 in] slot width • Plastic-
molded components
HOA0825.
Features: Phototransistor output • Four
mounting configurations • 4,2 mm [0.165
in] slot • Plastic-molded components
Benefits: An infrared emitter facing
a phototransistor or photodarlington.
Detector switching takes place when an
opaque object passes through the slot
between emitter and detector. Employs
an IR transmissive housing which
features smooth optical faces without
external aperture openings; desirable
when aperture blockage from airborne
contaminants is a possibility.
Benefits: Phototransistor with internal
base-emitter shunt resistance. Transfer
molding of this device provides enhanced
optical centerline performance. Lead
lengths are staggered to provide a
simple method of polarity identification.
Provides high contrast ratio in reflective
applications where unwanted background
reflection is a possibility. Potential
Benefits: An infrared emitter facing a
phototransistor or photodarlington. Slot in
the housing between emitter and detector
provides the means for mechanically
interrupting the emitter beam.
Phototransistor switching takes place
when an opaque object passes through
the slot between emitter and detector.
applications include those which require
ambient light rejection, or in transmissive
applications where the interrupter media is
semi-transparent to infrared energy.
HOA086X.
HOA088X.
Features: Phototransistor output
• Often accurate position sensing
• Four mounting configurations • 3,18 mm
[0.125 in] slot width • Choice of opaque
or IR transmissive housings • Options
include mounting tab configurations, lead
spacing, electro-optical characteristics,
detector aperture size, and housing
materials • Plastic-molded components
Features: Phototransistor output • Four
mounting configurations • Often accurate
position sensing • 3,18 mm [0.125 in] slot
width • 24 in [610 mm] min. 26 AWG UL
1429 leads • Opaque or IR transmissive
housings • Options of mounting tab
configurations, lead spacing, electro-
optical characteristics, & detector aperture
size
SDP8476-201.
Features: Side-looking plastic package
• Low light level immunity • 50° (nominal)
acceptance angle • Mechanically and
spectrally matched to SEP8506 and
SEP8706 infrared emitters
Unless otherwise noted, potential applications include printers and copiers, motion control systems, metering systems, liquid-level
sensing, data storage systems, scanning, automated transaction, drop sensors, and other noninvasive medical equipment.
10
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HONEYWELL [ Honeywell ]
