32-bit ARM Cortex™-M3 MCU
HT32F1251/51B/52/53
PLL Characteristics
Table 12. PLL Characteristics
TA = 25°C, unless otherwise specified.
Symbol
fPLLIN
Parameter
PLL input clock frequency
PLL output clock frequency
PLL lock time
Conditions
Min
4
Typ
—
Max
16
Unit
MHz
MHz
ms
PLLVDD18 = 1.8 V
fPLL
PLLVDD18 = 1.8 V
PLLVDD18 = 1.8 V
8
—
144
—
tLOCK
—
TBD
Memory Characteristics
Table 13. Flash Memory Characteristics
TA = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Number of guaranteed
program /erase cycles before
failure. (Endurance)
V
DD18 =1.8 V,
NENDU
1
—
—
kcycles
TA= -40°C ~ +85°C
TRET
Data retention time
TA = 25°C
100
40
—
—
—
—
Years
VDD18 = 1.8 V,
TA = -40°C ~ +85°C
tPROG
Word programming time
μs
VDD18 = 1.8 V,
TA = -40°C ~ +85°C
tERASE
Page erase time
Mass erase time
20
20
—
—
40
40
ms
ms
VDD18 = 1.8 V,
TA = -40°C ~ +85°C
tMERASE
I/O Port Characteristics
Table 14. I/O Port Characteristics
TA = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
Max
3
Unit
μA
μA
μA
μA
μA
μA
V
3.3 V IO
VI = 0 V, On-chip
IIL
Low level input current 5 V-tolerant IO pull-up resister
—
3
disabled.
Reset pin
—
3
3.3 V IO
—
3
VI = VDD33, On-chip
IIH
High level input current 5 V-tolerant IO pull-down resister
—
3
disabled.
Reset pin
—
3
3.3 V IO
Low level input voltage 5 V-tolerant IO
Reset pin
-0.3
-0.3
-0.3
2
0.8
0.8
0.8
3.6
5.5
5.5
V
VIL
V
V
3.3 V IO
V
VIH
High level input voltage 5 V-tolerant IO
Reset pin
2
2
V
Rev. 1.00
26 of 35
May 27, 2011
HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
