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HMC484MS8GE 参数 Datasheet PDF下载

HMC484MS8GE图片预览
型号: HMC484MS8GE
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓MMIC 10 WATT T / R开关DC - 3 GHz的 [GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz]
分类和应用: 射频和微波开关射频开关微波开关
文件页数/大小: 8 页 / 273 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC484MS8G / 484MS8GE  
v04.0608  
GaAs MMIC 10 WATT T/R SWITCH  
DC - 3 GHz  
Pin Descriptions  
Pin Number  
Function  
A
Description  
Interface Schematic  
1
2
See truth table and control voltage table.  
B
See truth table and control voltage table.  
This pin is DC coupled and matched to 50 Ohms.  
Blocking capacitors are required.  
3, 5, 8  
4
RFC, RF1, RF2  
Vdd  
Supply Voltage  
Package bottom must also  
be connected to PCB RF ground.  
6, 7  
GND  
11  
Typical Application Circuit  
Notes:  
1. Set logic gate and switch Vdd = +3V to +10V and use HCT series logic to provide a TTL driver interface.  
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +10 Volts applied to the CMOS  
logic gates and to pin 4 of the RF switch.  
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency  
of operation.  
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower  
RF power capability) at bias voltages down to +3V.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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