v02.0204
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
MICROWAVE CORPORATION
Absolute Maximum Ratings
8
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.35 mW/°C above 85 °C)
0.413 W
Thermal Resistance
(channel to lead)
157 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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HITTITE [ HITTITE MICROWAVE CORPORATION ]
